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DTSTAMP:20250822T115810Z
LOCATION:Room 5.2A17
DTSTART;TZID=Europe/Stockholm:20250617T113000
DTEND;TZID=Europe/Stockholm:20250617T120000
UID:submissions.pasc-conference.org_PASC25_sess111_msa109@linklings.com
SUMMARY:3D Lensless X-ray Imaging of Microchips at 4 nm Resolution
DESCRIPTION:Tomas Aidukas (Paul Scherrer Institute)\n\nAs transistor dimen
 sions have progressively shrunk over the years, X-ray microscopy resolutio
 n has also continued to improve to meet the demands of the semiconductor i
 ndustry. Although electron microscopy can achieve higher imaging resolutio
 ns, X-rays offer unique advantages, including non-destructive 3D imaging o
 f fully intact integrated circuit (IC) dies and imaging under operando con
 ditions. In this presentation, I will introduce ongoing innovations of syn
 chrotron-based X-ray microscopy, with a focus on a technique called ptycho
 graphic X-ray computed tomography. Our recent work addresses nanometer-sca
 le experimental instabilities and depth-of-field limitations, enabling an 
 unprecedented 4-nanometer resolution achieved during integrated circuit im
 aging. With the upcoming SLS upgrade, X-ray microscopy performance is expe
 cted to dramatically improve. This presentation will discuss the implicati
 ons of these advancements and the potential of X-ray microscopy for nanosc
 ale metrology of integrated circuits.\n\nDomain: Chemistry and Materials, 
 Engineering, Life Sciences, Physics, Computational Methods and Applied Mat
 hematics\n\nSession Chair: Abraham Levitan (Paul Scherrer Institute)\n\n
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